Gallium Arsenide Substrate|GaAs Wafer|GaAs Epitaxial Wafer

微信扫码联系(或添加sicwafer)

Gallium Arsenide Substrate|GaAs Wafer|GaAs Epitaxial Wafer

1. What is GaAs Substrate & GaAs Wafer? Main Applications

Gallium Arsenide (GaAs) is a high‑performance compound semiconductor material, featuring direct band‑gap, high electron mobility, high‑frequency & low‑noise performance, and high conversion efficiency.

GaAs substrates are available in conductive type and semi‑insulating type. They are widely adopted for:

  • Laser Diodes (LD), LED chips, near‑infrared lasers, quantum‑well high‑power lasers, high‑efficiency solar panels
  • HEMT & HBT chips for radar, microwave, millimeter‑wave systems and ultra‑high‑speed computing & optical communication
  • RF components for wireless communication, 4G / 5G, satellite communication and WLAN systems

Recently, GaAs substrates have achieved great progress in Mini‑LED, Micro‑LED and red‑light LED sectors, and are extensively deployed for AR / VR wearable devices.

Gallium Arsenide Substrate|GaAs Wafer|GaAs Epitaxial Wafer

2. GaAs Substrate Specifications

Item Parameter
Diameter 50mm | 75mm | 100mm | 150mm
Growth Method LEC (Liquid‑Encapsulated Czochralski), VGF (Vertical Gradient Freeze)
Wafer Thickness 350 μm ~ 625 μm
Crystal Orientation <100> / <111> / <110> or custom orientations
Conductive Type P‑type / N‑type / Semi‑insulating
Dopant Zn / Si / Undoped
Carrier Concentration 1E17 ~ 5E19 cm⁻³
Room‑temperature Resistivity (SI grade) ≥1E7 ohm•cm
Electron Mobility ≥4000 cm²/V·sec
EPD (Etch Pit Density) 100 ~ 1E5 cm⁻²
TTV (Total Thickness Variation) ≤ 10 μm
Bow / Warp ≤ 20 μm
Surface Finish DSP (Double‑Side Polished) / SSP (Single‑Side Polished)
Laser Mark Available upon request
Grade Epi‑polished grade / Mechanical grade

Customization: Custom thickness, polishing and lapping grades are available according to customer requirements.

3. GaAs Epitaxial Wafer Specifications

We provide custom‑built GaAs epitaxial wafers with varied epitaxial structure and thickness. Our GaAs epi‑wafer product portfolio covers multiple device‑oriented structures for optoelectronic and RF applications.

Related products: GaAs substrate, InP substrate, GaN substrate   4‑Inch Custom Ultra‑Thick Silicon Wafers|Custom Ultra‑Thin &#038; Ultra‑Flat Silicon Wafers     磷化铟单晶衬底

Categories:

Tags: